tsm1n60l 600v n-channel power mosfet 1/7 version: b07 to - 252 to - 251 general description the tsm1n60l is used an advanced termination scheme to provide enhanced voltage-blocking capability wi thout degrading performance over time. in addition, this advanced mosfet is designed to withstand high energ y in avalanche and commutation modes. the new energy eff icient design also offers a drain- to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power supplies, co nverters and pwm motor controls, these devices are particularly well suited for bridge circuits where diode speed a nd commutating safe operating areas are critical and o ffer additional and safety margin against unexpecte d voltage transients. features robust high voltage termination avalanche energy specified diode is characterized for use in bridge circuits source to drain diode recovery time comparable to a discrete fast recovery diode. i dss and v ds(on) specified at elevated temperature ordering information part no. package packing tsm1n60lcp ro to-252 2.5kpcs / 13 reel tsm1n60lch c5 to-251 50pcs / tube absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v continuous drain current i d 1 a pulsed drain current i dm 4 a continuous source current (diode conduction) a,b i s 1 a single pulse drain to source avalanche energy (v dd = 100v, v gs =10v, i as =2a, l=10mh, r g =25 ) eas 20 mj maximum power dissipation @t c =25 o c p dtot 30 w peak diode recovery voltage slope dv/dt 3 v/ns operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c notes: 1. pulse width limited by safe operating area 2. isd 1a, di/dt 100a/us, vdd bv dss , t j <=t jmax product summary v ds (v) r ds(on) ( ) i d (a) 600 12 @ v gs =10v 1 pin definition : 1. gate 2. drain 3. source block diagram n-channel mosfet
tsm1n60l 600v n-channel power mosfet 2/7 version: b07 thermal performance parameter symbol limit unit lead temperature (1/8 from case) t l 10 s thermal resistance C junction to case r ? j c 4.16 o c/w thermal resistance - junction to ambient r ? ja 100 o c/w notes: surface mounted on fr4 board of 1 in 2 , 2oz cu, t 10sec electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 600 -- -- v drain-source on-state resistance v gs = 10v, i d = 0.6a r ds(on) -- 10.5 12 gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v zero gate voltage drain current v ds = 600v, v gs = 0v i dss -- -- 10 ua gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na forward transconductance v ds R 50v, i d = 0.5a g fs -- 10 -- s diode forward voltage i s = 1a, v gs = 0v v sd -- -- 1.5 v dynamic b total gate charge v ds = 400v, i d = 1a, v gs = 10v q g -- 8.5 14 nc gate-source charge q gs -- 1.8 -- gate-drain charge q gd -- 4 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 210 -- pf output capacitance c oss -- 28 -- reverse transfer capacitance c rss -- 4.2 -- switching b, c turn-on delay time v gs = 10v, i d = 1a, v ds = 300v, r g = 6 t d(on) -- 8 -- ns turn-on rise time t r -- 21 -- turn-off delay time t d(off) -- 18 -- turn-off fall time t f -- 24 -- notes: a. pulse test: pulse width <=300us, duty cycle <=2% b. for design reference only, not subject to produc tion testing. c. switching time is essentially independent of operating temperature.
tsm1n60l 600v n-channel power mosfet 3/7 version: b07 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm1n60l 600v n-channel power mosfet 4/7 version: b07 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction-to -ambient
tsm1n60l 600v n-channel power mosfet 5/7 version: b07 to-252 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-252 dimension dim millimeters inches min max min max a 2.290 bsc 0.090 bsc a1 4.600 bsc 0.180 bsc b 7.000 7.200 0.275 0.283 c 6.000 6.200 0.236 0.244 d 6.400 6.604 0.252 0.260 e 2.210 2.387 0.087 0.094 f 0.010 0.127 0.000 0.005 g 5.232 5.436 0.206 0.214 g1 0.666 0.889 0.026 0.035 g2 0.633 0.889 0.025 0.035 h 0.508 ref 0.020 ref i 0.900 1.500 0.035 0.059 j 2.743 ref 0.108 ref k 0.660 0.940 0.026 0.037 l 1.397 1.651 0.055 0.065 m 1.100 ref 0.043 ref
tsm1n60l 600v n-channel power mosfet 6/7 version: b07 to-251 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-251 dimension dim millimeters inches min max min max a 2.190 2.380 0.0862 0.0937 a1 0.890 1.140 0.0350 0.0449 b 0.640 0.890 0.0252 0.0350 b1 0.760 1.140 0.0299 0.0449 b2 5.210 5.460 0.2051 0.2150 c 0.460 0.580 0.0181 0.0228 c1 0.460 0.580 0.0181 0.0228 d 5.970 6.100 0.2350 0.2402 e 6.350 6.730 0.2500 0.2650 e 2.280 bsc 0.0898 bsc l 8.890 9.650 0.3500 0.3799 l1 1.910 2.280 0.0752 0.0898 l2 0.890 1.270 0.0350 0.0500 l3 1.150 1.520 0.0453 0.0598
tsm1n60l 600v n-channel power mosfet 7/7 version: b07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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